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| http://www.belling.com.cn - 1 - 2/27/2008 total 1 pages BLV297 n-channel enhancement mode power mosfet ease of paralleling bv dss 200v fast switching r ds(on) 2.0 ? simple drive requirements i d 0.65a description this advanced high voltage mosfet is produced using bellings proprietary dmos technology. designed for high efficiency logic level circuit . o die size with scribe line 1570 m x 1570 m scribe line 80um o die thickness 300 20um o metallization top al bottom ti / ni / ag o bonding pad size gate 140 m x 102 m source 540 m x 540 m o passivation electrical characteristics ( t c =25c unless otherwise noted ) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 200 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =0.65a - - 2.0 v gs(th) gate threshold voltage v ds =v gs , i d =400ua 0.5 - 1.8 v i dss drain-source leakage current v ds =200v, v gs =0v - - 0.1 ua i gss gate-source leakage current v gs = 20v - - 10 na v sd forward on voltage v gs =0v, i s =0.65a - - 1.2 v
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